Flip Chip Bonder for Surface Activated COC FC2000 (CoC)

Features

Specifications

Substrate size [mm] 0.2L × 0.2W × 0.05t-20L × 20W × 1t
Chip orientation Face up (2 inch tray)
Cycle time 8 [sec/chip] *1
Alignment accuracy ±2 [µm] (X,Y) *2 / ±1 [µm] (X,Y) *2 (high accuracy alignment mode)
Bonding force Ultra-low pressure head : 0.049-14.7
Standard head :1.96-294
Heated tool temperature [°C] RT-450 Ceramic heater
Power 3-phase, AC200V ±10%, 50/60Hz ±1Hz or 3-phase, AC220V ±10%, 50/60Hz ±1Hz, 10kVA
Air pressure [MPa] Dry air 0.49
Vacuum [kPa] -80
Gas used Ar
Equipment dimensions [mm] Approx. 1900W × 1145D × 1970H
Weight [kg] Approx. 1500

Notes
*1 Cycle time does not include processing time (i.e. loading , bonding and vacuum release).
*2 Accuracy measurement is conducted using Toray-standard substrates.

Options

  1. Heat stage
  2. Ultra-low pressure head

Bonding Process

Bonding Process

Principle of Room Temperature Bonding

Principle of Room Temperature Bonding

Source: Suga Laboratory, Research Center for Advanced Science and Technology (RCAST), The University of Tokyo

Increasing Accuracy in the Semiconductor Package Field (COC3D Bonding Structure)

Increasing Accuracy in the Semiconductor Package Field (COC3D Bonding Structure)

 Flip Chip Bonder for Surface Activated COC FC2000 (CoC)
Bonders
Flip Chip Bonder (for SiP/COC/CSP ) FC3000
Flip Chip Bonder (for SiP/COC/CSP) FC3000S
Bonder for Large-sized Substrates (Applications: Embedded Packaging etc.) MD3000/3500
Super High Accuracy Flip Chip Bonder (for optical devices) OF2000
Flip Chip Bonder (for MCM/COF/CSP) FC2000 series
Flip Chip Bonder (for Chip on Chip) FC2000X
Manual Type Flip Chip Bonder (for R&D Purpose) FC100M
Flip Chip Bonder for Surface Activated COC FC2000 (CoC)
Flip Chip Bonder (for RF-ID Tag) CF2000R
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