Flip Chip Bonder (for SiP/COC/CSP) FC3000S

Features

Specifications

Substrate size [mm] Ceramic heater type 3L × 3W-30L × 30W t=0.025-1.6
Constant heater type 30L × 30W-230L × 60W t=0.05-1.6
Substrate types Glass Epoxy, FPC, Ceramics, etc.
Chip size [mm] Thermo-compression process *1 3L × 3W-20L × 20W t=0.05-1
Ultrasonic bonding process *2 3L × 3W-15L × 15W t=0.3-0.8
Ultra low pressure bonding process 3L × 3W-10L × 10W t=0.05-1
Number of chip types 1-3
Chip orientation Face down
Cycle time *3 *4 6.0 [sec/chip]
Alignment accuracy (3σ) *5 ±2 [µm] (X, Y)
Bounding force [N] High-stiffness head 9.8-490
Ultra low pressure head 0.049-9.8
Bonding head type Ultrasonic head 50kHz, 150W temperature RT, 100 [°C], 150 [°C], 180 [°C], 200 [°C]
Ceramic heater head temperature RT-450 [°C]
Power 3-phase, AC200V ±10%, 50/60Hz ±1Hz or 3-phase, AC220V ±10%, 50/60Hz ±1Hz, 10kVA
Air pressure [MPa] Dry air 0.49
Vacuum [kPa] -80
Equipment dimensions [mm] Approx. 1030W × 1420D × 1880H (Height of signal light is included)
Weight [kg] Approx. 1500
Standard function High-stiffness head 
Z-axis control 
Automatic thermo-calibration 
Automatic coplanarity adjustment

Notes
*1 Slim chip (Min. 1.0 mm Wide) and large-sized chip (Max. 30.0 mm Long × 30.0mm Wide) can be processed with an optional heat tool.
*2 Slim chip (Min. 1.0 mm Wide) and long chip (Max.28.0 mm Long × 10.0 mm Wide) can be processed with an optional horn.
*3 The time required for setting substrate is not included.
*4 Cycle time does not include processing time (i.e. loading, bonding and vacuum release time).
*5 Accuracy measurement is taken using Toray-standard substrates.

Process

The system is exchangeable among ultrasonic bonding process, thermo-compression process and solder process, by a simple change-over.

Process

Options

  1. Vacuum pump
  2. Ionizer
  3. N2 Purge
  4. Mounting monitoring system
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